Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1515-1521

  Karmalkar, Shreepad ^b   Mishra, Umesh K ^a,c  

^a IEEE   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^c University of California   (United States)

Author keywords

Breakdown voltage; Field plate; GaN HEMT

Indexed keywords

ALUMINUM GALLIUM NITRIDE; FIELD PLATE DEVICE;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC INSULATORS; ELECTRIC RESISTANCE; MESFET DEVICES; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035424160     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936500     Document Type: Article

References (12)

1. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
2. High Al-content AlGaN/GaN MODFET's for ultrahigh performance
3. Trends in power semiconductor devices
4. High breakdown in GaN HEMT with overlapping gate structure
5. Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate
6. Lateral HV-IC with 1200 V bipolar and FET devices
7. Surface breakdown in silicon planar diodes equipped with a field plate
8. Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring
9. Experimental evaluation of impact ionization coefficients in GaN
10. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
11. Very high voltage AlGaN/GaN HEMTs using a field plate deposited on a stepped insulator