Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs

Electronics Letters

Volumn 41, Issue 8, 2005, Pages 503-504

  Disanto, D W ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE;

COPLANAR WAVEGUIDE; DRAIN CURRENT; ELECTRICAL ISOLATION; GATE-TO-DRAIN REGION;

FIELD EFFECT TRANSISTORS;

EID: 18144423165     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050336     Document Type: Article

References (6)

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2. Koley, G., Tilak, V., Eastman, L.F., and Spencer, M.G.: 'Slow transients observed in AlGaN/GaN HFETs: effects of SiNx passivation and UV illumination', IEEE Trans. Electron Devices, 2003, 50, (4), pp. 886-893
3. Nakagami, N., Ohno, Y., Kishimoto, S., Maezawa, K., and Mizutani, T.: 'Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy', Appl. Phys. Lett., 2004, 85, (24), pp. 6028-6029
4. Kaper, V., Tilak, V., Green, B., Thompson, R., Prunty, T., Eastman, L.F., and Shealy, J.R.: 'Time-domain characterization of nonlinear operation of an AlGaN/GaN HFET'. Proc. of 61st ARFTG Conf. Dig., 2003, pp. 97-102
5. Shifrin, M.B., Katzin, P.J., and Ayasli, Y.: 'Monolithic FET structures for high-power control component applications', IEEE Trans. Microw. Theory Tech., 1989, 37, (12), pp. 2134-2142
6. Trew, R.J.: 'SiC and GaN transistors - is there one winner for microwave power applications?', Proc. IEEE, 2002, 90, (6), pp. 1032-1047