Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Meyer, David J ^a   Flemish, Joseph R ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SURFACE TREATMENT;

INTERDEVICE ISOLATION CURRENT; PREPASSIVATION PLASMAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 44049089981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2928236     Document Type: Article

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23. D. J. Meyer, J. R. Flemish, and J. M. Redwing (unpublished).