Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts

2006 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings

Volumn , Issue , 2006, Pages 25-31

  Faqir, M ^a   Chini, A ^a   Verzellesi, G ^a   Fantini, F ^a   Rampazzo, F ^b   Meneghesso, G ^b   Zanoni, E ^b   Bernat, J ^c   Kordos, P ^d  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CRYSTALS; DEGRADATION; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SULFATE MINERALS;

(1 1 0) SURFACE; (ABIOTIC AND BIOTIC) STRESS; BUFFER REGION; COMPOUND SEMICONDUCTOR (CS); CURRENT REDUCTION; DEGRADATION MECHANISMS; DEVICE SIMULATIONS; EXPERIMENTAL DATA; GATE DRAIN; GATE LEAKAGES; HIGH FIELDS; LAG EFFECTS; STRESS-INDUCED;

DRAIN CURRENT;

EID: 46149114341     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ROCS.2006.323400     Document Type: Conference Paper

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