Stable 20 W/mm AlGaN-GaN MOSHFET

Electronics Letters

Volumn 41, Issue 13, 2005, Pages 774-775

  Simin, G ^a   Adivarahan, V ^a   Yang, J ^a   Koudymov, A ^a   Rai, S ^a   Asif Khan, M ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRON GAS; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

FIELD-PLATES (FP); GATE CURRENTS; GATE-LEAKAGE CURRENTS; LEAKY DIELECTRICS;

MOSFET DEVICES;

EID: 22944485700     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051203     Document Type: Article

References (11)

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