Aging and stability of GaN high electron mobility transistors and light-emitting diodes with TiB2- and Ir-based contacts

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 272-276

  Khanna, Rohit ^a   Stafford, Luc ^b   Voss, Lars F ^c   Pearton, Steve J ^c   Wang, H T ^c   Anderson, Travis ^c   Hung, Sheng Chun ^c   Ren, Fan ^c  

^a Oerlikon   (United States)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE CONTACTS; GATE CURRENTS; INGAN/GAN; LIGHT EMITTING DIODE LEDS; LONG-TERM ANNEALING; MULTIPLE QUANTUM WELLS; OHMIC METALS; SOURCE DRAINS; SOURCE-DRAIN CURRENTS; THERMAL STABILITIES;

BORIDES; CURRENT DENSITY; DIFFUSION BARRIERS; ELECTRIC CONTACTORS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; IRIDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; OHMIC CONTACTS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 64249098711     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.915005     Document Type: Article

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