High-temperature very low frequency noise-based investigation of slow transients in AlGaN/GaN MODFETs

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 265-271

  Valizadeh, Pouya ^a  

^a Gina Cody School of Engineering and Computer Science   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; DC CHARACTERISTICS; DRAIN-CURRENT; ENERGY LEVELS; FREQUENCY RANGES; GENERATION RECOMBINATIONS; HIGH TEMPERATURES; MODFETS; MODULATION-DOPED FIELD-EFFECT TRANSISTORS; NOISE CHARACTERISTICS; NOISE DATUM; ROOM TEMPERATURES; TIME CONSTANTS; VERY LOW FREQUENCIES;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; THERMAL NOISE; TRANSIENTS;

THERMAL EFFECTS;

EID: 52949113166     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.916302     Document Type: Article

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