GaN-on-si reliability: A comparative study between process platforms

2006 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings

Volumn , Issue , 2006, Pages 21-24

  Singhal, S ^a   Chaudhari, A ^a   Hanson, A W ^a   Johnson, J W ^a   Therrien, R ^a   Rajagopal, P ^a   Li, T ^a   Park, C ^a   Edwards, A P ^a   Piner, E L ^a   Kizilyaili, I C ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(E ,3E) PROCESS; (OTDR) TECHNOLOGY; COMPARATIVE STUDIES; COMPOUND SEMICONDUCTOR (CS); IN ORDER; RELIABILITY TESTING;

CHEMICAL ACTIVATION; CRYSTALS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; TESTING;

ACTIVATION ENERGY;

EID: 46149123426     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ROCS.2006.323391     Document Type: Conference Paper

References (4)

1. S. Singhal et al, "Reliability of large Periphery GaN-on-Si HFETs." Paper presented at Reliability of Compound Semiconductors Workshop 2005, Palm Springs, CA., 2005.
2. B. Therrien et al, "A 36mm GaN-on-Si HFET Producing 368W at 60V with 70% Drain Efficiency." Paper presented at the 2005 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2005.
3. S. Singhal et al, "GaN-on-Si Failure Mechanisms and Reliability Improvements." Paper presented at the 2006 IEEE International Reliability Physics Symposium (IRPS), San Jose, CA., 2006.
4. S. Singhal et al, "Reliability of large periphery GaN-on-Si HFETs," Microelectronics Reliability, Volume 46, Issue 8, August 2006, pp. 1247-1253.