A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

IEEE Transactions on Electron Devices

Volumn 50, Issue 10, 2003, Pages 2015-2020

  Mizutani, Takashi ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN GaN HEMT; Bias stress; Current collapse; Light illumination; Series resistance; Surface state

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRODES; ENERGY GAP; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM NITRIDE; CURRENT COLLAPSE; LIGHT ILLUMINATION; SERIES RESISTANCE; SURFACE STATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0141905929     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816549     Document Type: Article

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