Analysis of the survivability of GaN low-noise amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 55, Issue 1, 2007, Pages 37-42

  Rudolph, Matthias ^a,b   Behtash, Reza ^b,c   Doerner, Ralf ^a,b   Hirche, Klaus ^d   Würfl, Joachim ^a,b   Heinrich, Wolfgang ^a,b   Träkle, Günther ^a,b  

^a IEEE   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c United Monolithic Semiconductors GmbH   (Germany)

^d Tesat Spacecom GmbH and Co KG   (Germany)

Author keywords

Amplifier noise; Integrated circuit noise; Microwave field effect transistor (FET) amplifiers; Monolithic microwave integrated circuit (MMIC) amplifiers; Noise; Semiconductor device noise

Indexed keywords

AMPLIFIER NOISE; INTEGRATED-CIRCUIT NOISE; LOW-NOISE AMPLIFIERS; SEMICONDUCTOR DEVICE NOISE;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVE AMPLIFIERS; SPURIOUS SIGNAL NOISE; TIME DOMAIN ANALYSIS;

GALLIUM NITRIDE;

EID: 33846643135     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.886907     Document Type: Article

References (9)

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