Impact of selective Al2O3 passivation on current collapse in AlGaN/GaN HEMTs

Electronics Letters

Volumn 43, Issue 23, 2007, Pages 1314-1315

  Sun, H F ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CURRENTS; ELECTRIC FIELDS; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

CURRENT COLLAPSE; DRAIN REGIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36048932745     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072160     Document Type: Article

References (5)

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2. Okamoto, Y., Ando, Y., Hataya, K., Nakayama, T., Miyamoto, H., Inoue, T., Senda, M., Hirata, K., Kosaki, M., Shibata, N., and Kuzuhara, M.: ' Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate ', IEEE Trans. Microw. Theory Tech., 2004, 52, (11), p. 2536-2540 10.1109/TMTT.2004.837159 0018-9480
3. Koudymov, A., Adivarahan, V., Yang, J., Simin, G., and Khan, M.A.: ' Mechanism of current collapse removal in field-plated nitride HFETs ', IEEE Electron Device Lett., 2005, 26, (10), p. 704-706 10.1109/LED.2005.855409 0741-3106
4. Disanto, D.W., and Bolognesi, C.R.: ' Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs ', Electron. Lett., 2005, 41, (8), p. 503-504 10.1049/el:20050336 0013-5194
5. 4 passivation on current collapse in AlGaN/GaN high-electron-mobility transistors on silicon ', Appl. Phys. Lett., 2007, 90, (17), p. 173504 10.1063/1.2730748 0003-6951