2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Solid-State Electronics

Volumn 52, Issue 7, 2008, Pages 1011-1017

  Sonia, G ^a,b   Richter, E ^a   Brunner, F ^a   Denker, A ^c   Lossy, R ^a   Mai, M ^a   Lenk, F ^a   Bundesmann, J ^c   Pensl, G ^d   Schmidt, J ^a   Zeimer, U ^a   Wang, L ^a   Baskar, K ^b   Weyers, M ^a   Wurfl J ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b ANNA UNIVERSITY   (India)

^c HAHN MEITNER INSTITUT   (Germany)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

GaN FET; Irradiation damage; Point defects; Radiation hardness

Indexed keywords

HEAVY IONS; HETEROJUNCTIONS; ION BOMBARDMENT; PHOTOLUMINESCENCE; POINT DEFECTS; X RAY DIFFRACTION;

IRRADIATION DAMAGE; KRYPTON IONS; RADIATION HARDNESS;

FIELD EFFECT TRANSISTORS;

EID: 44749085149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.02.005     Document Type: Article

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