Ozone passivation of slow transient current collapse in AlGaN/GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  DiSanto, D W ^a   Sun, H F ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; OZONE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DIELECTRIC ENCAPSULATION; SURFACE TRAPPING; THREADING DISLOCATIONS;

FIELD EFFECT TRANSISTORS;

EID: 33645532053     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2161810     Document Type: Article

References (21)

1. I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, and E. Kohn, IEEE Electron Device Lett. 22, 62 (2001).
2. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
3. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, IEEE Trans. Electron Devices 50, 2015 (2003).
4. G. Koley, V. Tilak, L. F. Eastman, and M. G. Spencer, IEEE Trans. Electron Devices 50, 886 (2003).
5. T. R. Prunty, J. A. Smart, E. N. Chumbes, B. K. Ridley, L. F. Eastman, and J. R. Shealy, Proceedings 2000 IEEE/Cornell Conference on High Performance Devices, 7-9 Aug. 2000/208-214 Ithaca, NY.
6. H. Leier, A. Vescan, R. Dietrich, A. Wieszt, and H. H. Sledzik, IEICE Trans. Electron. E84-C, 1442 (2001).
7. A. Vertiatchikh, L. F. Eastman, W. J. Schaff and I. Prunty, Electron. Lett. 38, 388 (2002).
8. G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 2651 (2001).
9. K.-Y. Park, H.-I. Cho, H.-C. Choi, Y.-H. Bae, C.-S. Lee, J.-L. Lee, and J.-H. Lee, Jpn. J. Appl. Phys., Part 2 43, L1433 (2004).
10. B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, and J. Han, Appl. Phys. Lett. 80, 1661 (2002).
11. S. M. Sze, Physics of Semicondictor Devices, 2nd ed. (Wiley, New York, 1981).
12. G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, IEEE Trans. Electron Devices 51, 1554 (2004).
13. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001).
14. S. M. Lee, M. A. Belkhir, X. Y. Zhu, Y. H. Lee, Y. G. Hwang and T. Frauenheim, Phys. Rev. B 61, 16033 (2000).
15. J. E. Northrup, Appl. Phys. Lett. 78, 2288 (2001).
16. L. Lymperakis, J. Neugebauer, M. Albrecht, T. Remmele, and H. P. Strunk, Phys. Rev. Lett. 93, 196401 (2004).
17. E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, and J. S. Speck, J. Appl. Phys. 94, 7611 (2003).
18. E. J. Miller, D. M. Schaadt, E. T. Yu, P. Waltereit, C. Poblenz, and J. S. Speck, Appl. Phys. Lett. 82, 1293 (2003). This work focused on perpendicular transport through Schottky contacts as opposed to surface transport, but we do not believe this difference to be significant: surface charge can in principle reenter the channel for a lower resistance path to the ohmic contact.
19. N. Moser, R. C. Fitch, A. Crespo, J. K. Gillespie, G. H. Jessen, G. D. Via, B. Luo, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton, J. Electrochem. Soc. 151, 915 (2004).
20. Y. Irokawa, B. Luo, F. Ren, B. P. Gila, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, S. S. Park, and Y. J. Park, Electrochem. Solid-State Lett. 7, 188 (2004).
21. Y. Eguchi, S. Kishimoto, and T. Mizutani, Jpn. J. Appl. Phys., Part 2 40, L589 (2001).