Current collapse induced in AlGaN/GaN HEMTs by short-term dc bias stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 320-323

  Mittereder, J A ^a   Binari, S C ^a   Klein, P B ^a   Roussos, J A ^a   Katzer, D S ^a   Storm, D F ^a   Koleske, D D ^a   Wickenden, A E ^a   Henry, R L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS;

SHORT TERM BIAS-STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038310027     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. H. Kim et al., "Degradation Characteristics of AlGaN/GaN High Electron Mobility Transistors," in 39th IEEE International Reliability Physics Symposium (IRPS), 2001, pp. 214-218.
2. Y. Liu et al., "Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices," Phy. Stat. Sol. (a), Vol.188, No.l, 2001, pp. 233-237.
3. [3] S. C. Binari, W. Kruppa, H. B. Dietrich, G. Kelner, A. E. Wickenden, and J. A. Freitas, Jr., "Fabrication and Characterization of GaN FETs," Solid-State Electronic, Vol. 41, No. 10, 1997, pp. 1549-1554.
4. P. B. Klein et al., "Observation of deep traps responsible for current collapse in GaN metal-semiconductor field effect transistors," Applied Physics Letters, Vol. 75, 1999, pp. 4016-18.
5. P. B. Klein et al., "Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors," Electronics Letters, Vol.37, No.10, 2001, pp. 661-662
6. P. B. Klein et al., "Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy," Applied Physics Letters, Vol. 79, 2001, pp. 3527-29.
7. G. Meneghesso et al., "Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors," Applied Physics Letters, Vol. 69, No. 10, 1996, pp. 1411-13.