Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1689-1693

  Wurfl J ^a   Hilsenbeck, J ^a   Nebauer, E ^a   Trankle G ^a   Obloh, H ^b   Osterle W ^c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005144747     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00128-1     Document Type: Article

References (7)

1. L.F. Eastman. Results, potential and challenges of high power GaN-based transistors, phys. stat. sol. (a) 1999, 176, pp. 175-178
2. J. C. Zolper. A review of junction field effect transistors for tigh-temperature and high-power electronics, Solid-State Electron. 42, 2153 (1998).
3. C.-H. Chen, S. Keller, G. Parish, R. Ventury, P. Kozodoy, E. L. Hu, S. P. Denbaars, and U. M. Mishra. High-transconductance self-aligned AlGaN/GaN modulation doped field-effect transistors with regrown ohmic contacts, Appl. Phys. Lett. 73, 3147 (1998).
4. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins. High power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates, IEEE Electron Dev. Lett. 20, 161 (1999).
5. L.S. McCarthy, P. Kozodoy, M.J.W. Rodwell, S.P. DenBaars, U.K. Mishra. AlGaN/GaN heterojunction bipolar Transistor, IEEE Electron Dev. Lett. 20, 277-279 (1999).
6. J. Y. Duboz, Gallium nitride as seen by the industry, Plenary talk, International Conference on Nitride Semiconductors (ICNS3), Montpellier, phys. Stat. Sol. (a) 176, 5 (1999), pp. 5-14.
7. J. Würfl, V. Abrosimova, J. Hilsenbeck, E. Nebauer, W. Rieger, and G. Tränkle. Reliability considerations of III-nitride microelectronic devices, Microel. Reliab., 1999, 39, pp. 1737-1757.