Hot electron induced degradation of undoped AlGaN/GaN HFETs

Microelectronics Reliability

Volumn 43, Issue 6, 2003, Pages 823-827

  Kim, Hyungtak ^a   Vertiatchikh, Alexei ^a   Thompson, Richard M ^a   Tilak, Vinayak ^a   Prunty, Thomas R ^a   Shealy, James R ^a   Eastman, Lester F ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; GALLIUM NITRIDE; HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; TRANSCONDUCTANCE;

HOT ELECTRON STRESS;

MICROELECTRONICS;

EID: 0038486187     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00066-0     Document Type: Conference Paper

References (9)

1. Shealy J.R., Kaper V., Tilak V., Prunty T., Smart J.A., Green B.M.et al. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer. J. Phys.: Codens. Matter. 14(13):2002;3499-3509.
2. Kim H., Tilak V., Green B.M., Smart J.A., Schaff W.J., Shealy J.R.et al. Reliability evaluation of high power AlGaN/GaN HEMTs on SiC. Phys. Stat. Sol. (a). 188:2001;203-206.
3. Lee C, Witkowski L, Muir M, Tsering HQ, Saunier P, Wang H, et al. Reliability evaluation of AlGaN/GaN HEMTs. In: Proc Lester Eastman Conf on High Performance Dev, Newark, DE, 2002. p. 436-42.
4. Kohn E., Daumiller I., Schmid P., Nguyen N.X., Nguyen C.N. Large signal dispersion of AlGaN/GaN heterostructure field effect transistors. Electron. Lett. 353:1999;1022-1024.
5. Veturi R., Zhang N.Q., Keller S., Mishra U.K. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans. Electron Dev. 48:2001;560-566.
6. Tilak V, Kaper V, Thompson R, Prunty T, Kim H, Smart J, et al. Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs. In: Proc Int Symp Comp Semicond, Lausanne, Switzerland, October 2002.
7. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Shealy J.R., Eastman L.F. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs. IEEE Electron Dev. Lett. 21:2000;268-270.
8. Yeats R., D'Avanzo D.C., Chan K., Fernandez N., Taylor T.W., Vogel C. Gate slow transients in GaAs MESFETs causes, cures and impact on circuits. IEDM Tech Dig. 1988;842-845.
9. Meneghesso G., Haddab Y., Perrino N., Canali C., Zanoni E. Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMTs. Microelectron. Reliab. 36(11-12):1996;1895-1898.