Gan-on-si failure mechanisms and reliability improvements

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 95-98

  Singhal, S ^a   Roberts, J C ^a   Rajagopal, P ^a   Li, T ^a   Hanson, A W ^a   Therrien, R ^a   Johnson, J W ^a   Kizilyalli, I C ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

AlGaN GaN HFETs; Failure analysis; GaN high electron mobility transistors (HEMTs); Reliability; RF power transistors

Indexed keywords

PRODUCTION PROCESS; RF POWER TRANSISTORS; SEMICONDUCTOR INTERFACES;

ELECTRIC BREAKDOWN; FAILURE ANALYSIS; FIELD EFFECT TRANSISTORS; RELIABILITY THEORY; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33947206544     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251197     Document Type: Conference Paper

References (12)

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