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Volumn 42, Issue 24, 2006, Pages 1425-1426

RF knee walkout and source access region of unpassivated HFETs

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; MICROWAVE AMPLIFIERS; NETWORKS (CIRCUITS); POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33751517663     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062113     Document Type: Article
Times cited : (5)

References (8)
  • 1
    • 0035278804 scopus 로고    scopus 로고
    • The impact of surface states on the DC and RF characteristics of Al GaN/GaN HFETs
    • 10.1109/16.906451 0018-9383
    • Vetury, R., Zhang, N.Q., Keller, S., and Mishra, U.K.: ' The impact of surface states on the DC and RF characteristics of Al GaN/GaN HFETs ', IEEE Trans. Electron Devices, 2001, 48, (3), p. 560-566 10.1109/16.906451 0018-9383
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.3 , pp. 560-566
    • Vetury, R.1    Zhang, N.Q.2    Keller, S.3    Mishra, U.K.4
  • 2
    • 33646894455 scopus 로고    scopus 로고
    • SiC and GaN transistors - Is there one winner for microwave power applications?
    • 10.1109/JPROC.2002.1021568 0018-9219
    • Trew, R.J.: ' SiC and GaN transistors - is there one winner for microwave power applications? ', Proc. IEEE, 2002, 90, (6), p. 1032-1047 10.1109/JPROC.2002.1021568 0018-9219
    • (2002) Proc. IEEE , vol.90 , Issue.6 , pp. 1032-1047
    • Trew, R.J.1
  • 4
    • 33646723273 scopus 로고    scopus 로고
    • Nonlinear source resistance in high voltage microwave AlGaN/GaN HFET's
    • 10.1109/TMTT.2006.873627 0018-9480
    • Trew, R.J., Liu, Y., Bilbro, G.L., Kuang, W.W., Vetury, R., and Shealy, J.B.: ' Nonlinear source resistance in high voltage microwave AlGaN/GaN HFET's ', IEEE Trans. Microw. Theory Tech., 2006, 54, p. 2061-2067 10.1109/TMTT.2006. 873627 0018-9480
    • (2006) IEEE Trans. Microw. Theory Tech. , vol.54 , pp. 2061-2067
    • Trew, R.J.1    Liu, Y.2    Bilbro, G.L.3    Kuang, W.W.4    Vetury, R.5    Shealy, J.B.6
  • 5
    • 24144480579 scopus 로고    scopus 로고
    • SPICE model of AlGaN/GaN HEMT's and simulation of VCO and power amplifier
    • 0129-1564
    • Islam, S.S., and Anwar, A.F.M.: ' SPICE model of AlGaN/GaN HEMT's and simulation of VCO and power amplifier ', Int J. High Speed Electron. Syst., 2004, 14, (3), p. 853-859 0129-1564
    • (2004) Int J. High Speed Electron. Syst. , vol.14 , Issue.3 , pp. 853-859
    • Islam, S.S.1    Anwar, A.F.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.