Mechanisms of RF current collapse in AlGaNGaN high electron mobility transistors

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 240-247

  Faqir, Mustapha ^a   Verzellesi, Giovanni ^a   Chini, Alessandro ^a   Fantini, Fausto ^a   Danesin, Francesca ^b   Meneghesso, Gaudenzio ^b   Zanoni, Enrico ^b   Dua, Christian ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN GAN; EMISSION OF ELECTRONS; HIGH ELECTRON MOBILITIES; NUMERICAL DEVICE SIMULATIONS; PHYSICAL MECHANISMS; RF CURRENTS; SURFACE ELECTRIC FIELDS; SURFACE PASSIVATIONS; SURFACE TRAPS; SURFACE-POTENTIAL; TIME CONSTANTS; TRAP DENSITIES;

CHARGE TRAPPING; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; PASSIVATION; SURFACE CHEMISTRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 64249092831     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.922017     Document Type: Article

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