Thermal stability of Mo-based Schottky contact for AIGaN/GaN HEMT

Electronics Letters

Volumn 41, Issue 16, 2005, Pages 927-928

  Sozza, A ^a   Dua, C ^b   Morvan, E ^a,b   Grimbert, B ^c   Di Forte Poisson, M A ^b   Delage, S L ^b   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CHEMICAL ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLYBDENUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE DISTRIBUTION;

AEGING TEST; MO/AU GATE; SCHOTTKY CONTACT; THERMAL STORAGE;

THERMODYNAMIC STABILITY;

EID: 23944493160     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051475     Document Type: Article

References (5)

1. Mishra, U.K., Parikh, P., and Wu, Y: 'AlGaN-GaN HEMTs - an overview of device operation and applications', Proc. IEEE, 2002, 90, pp. 1022-1031
2. Lee, C., Saunier, P., Yang, J., and Khan, M.A.: 'AlGaN-GaN HEMTs on SiC With CW power performance of 4W/mm and 23% PAE at 35 GHz', IEEE Electron Device Lett., 2003, 24, pp. 616-618
3. Minko, A., Hoël, V., Lepilliet, S., Dambrine, G., De Jaeger, J.C., Cordier, Y., Semond, F., Natali, F., and Massies, J.: 'High-microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on highresistivity silicon substrates', IEEE Electronic Device Lett., 2004, 25, pp. 167-169
4. Chini, A., Buttari, D., Coffie, R., Shen, L., Heikman, S., Chakraborty, A., Keller, S., and Mishra, U.K.: 'Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs', IEEE Electronic Device Lett., 2004, 25, pp. 229-231
5. Sozza, A., Dua, C., Morvan, E., Grimbert, B., Hoel, V., Delage, S.L., Chaturvedi, N., Lossy, R., and Wuerfl, J.: 'Reliability investigation of gallium nitride HEMT', Microeltron. Reliab., 2004, 44, pp. 1369-1373