Low-frequency noise-based degradation prediction of Al xGa 1-xN/GaN MODFETs

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 3, 2006, Pages 479-485

  Valizadeh, Pouya ^a,b,c   Pavlidis, Dimitris ^a,b,d  

^a IEEE   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c West Virginia University   (United States)

^d DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Degradation; Low frequency noise (LFN); MODFET; Surface passivation

Indexed keywords

FREQUENCY NOISE; NOISE CURRENT CHARACTERISTICS;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PASSIVATION;

MOSFET DEVICES;

EID: 33750813577     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.882214     Document Type: Article

References (20)

1. L. Vandamme, "Noise as a diagnostic tool for quality and reliability of electronic devices," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2176-2187, Nov. 1994.
2. B. Jones, "Low frequency noise spectroscopy," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2188-2197, Nov. 1994.
3. O. Marinov, "The low frequency noise in HFETs estimates the effect of electrical stress," Microelectron. Reliab., vol. 40, no. 11, pp. 1959-1963, Nov. 2000.
4. S. Mohammadi, D. Pavlidis, and B. Bayraktaroglu, "Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBT's," IEEE Trans. Electron Devices, vol. 47, no. 4, pp. 677-686, Apr. 2000.
5. A. McWhorter, " 1/f noise and germanium surface properties," in Proc. Conf. Phys. Semicond. Surfaces, Jun. 1956, pp. 207-228.
6. F. Hooge, "The relation between 1/f noise and number of electrons," Physica, vol. B162, no. 3, pp. 344-352, Feb. 1990.
7. N. D'yakonova, M. Levinshteǐn, and S. Rumyantsev, "Nature of the bulk 1/f noise in GaAs and Si (review)," Sov, Phys. Semicond., vol. 25, no. 12, pp. 1241-1265, Dec. 1991.
8. R. Jayaraman and C. Sodini, "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1773-1782, Sep. 1989.
9. L. Vandamme, D. Rigaud, J. Peransin, R. Alabedra, and J. Dumas, "Gate current 1/f noise in GaAs MESFETs," IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 1071-1075, Jul. 1988.
10. H. van Meer, M. Valenza, K. van der Zanden, W. De Raedt, E. Simoen, D. Schreurs, and L. Kaufmann, "Effect of Schottky barrier alternation on the low-frequency noise of InP-based HEMT's," IEEE Electron Device Lett., vol. 19, no. 10, pp. 370-372, Oct. 1998.
11. D. V. Kuksenkov, H. Temkin, R. Gaska, and J. W. Yang, "Low frequency noise in AlGaN/GaN heterostracture field effect transistors," IEEE Electron Device Lett., vol. 19, no. 7, pp. 222-224, Jul. 1998.
12. M. A. Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, "Microwave performance of 0.25 μm gate AlGaN/GaN heterostructure field effect transistor," Appl. Phys. Lett., vol. 65, no. 9, pp. 1121-1123, Aug. 1994.
13. O. Ambacher, J. Smart, J. Shealy, N. Weinmann, K. Chu, M. Murphy, W. Schaff, L. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol. 85, no. 6, pp. 3222-3233, Mar. 1999.
14. O. Ambacher, B. Foutz, J. Smart, J. Shealy, N. Weinmann, K. Chu, M. Murphy, A. Sierakowski, W. Schaff, L. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, " J. Appl. Phys., vol. 87, no. 1, pp. 334-344, Jan. 2000.
15. I. Smorchkova, C. Elsass, J. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Hauss, S. Denbaars, J. Speck, and U. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy," J. Appl. Phys., vol. 86, no. 8, pp. 4520-4526, 1999.
16. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the dc and RF characterization of AlGaN/GaN HFETS," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
17. H. Leirer, A. Vescan, R. Dietrich, A. Wieszt, and H. H. Sledzik, "RF characterization and transit behavior of AlGaN/GaN power HFETs," IEICE Trans. Electron., vol. E84-C, no. 10, pp. 1442-1447, 2001.
18. P. Valizadeh and D. Pavlidis, "Low frequency noise-based monitoring of the effects of RF and dc stress on AlGaN/GaN MODFETs," in Proc. GaAs IC Symp. Techn. Dig., Nov. 2003, pp. 78-81.
19. _, "Effects of RF and dc stress on AlGaN/GaN MODFETs: A low frequency noise-based investigation," IEEE Trans. Device Mater, Rel., vol. 5, no. 3, pp. 555-563, Sep. 2005.
20. J. Peransin, P. Vignaud, D. Rigaud, and L. Vandamme, "1/f noise in MODFET's at low drain biases," IEEE Trans. Electron Devices, vol. 37, no. 11, pp. 2250-2253, Oct. 1990.