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Volumn 45, Issue 9-11, 2005, Pages 1617-1621

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; DATA REDUCTION; ELECTRIC CURRENTS; FREQUENCIES; HOT CARRIERS; MICROWAVES;

EID: 24144440420     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.081     Document Type: Conference Paper
Times cited : (39)

References (7)
  • 1
    • 33645602001 scopus 로고    scopus 로고
    • GaN-ready for cellular 3G?
    • March
    • GaN-ready for cellular 3G? Compound Semiconductors, March 2004.
    • (2004) Compound Semiconductors
  • 2
    • 18344390444 scopus 로고    scopus 로고
    • X-band radar is set to reap benefits of GaN technology
    • March
    • X-band radar is set to reap benefits of GaN technology, Compound Semiconductors, March 2005.
    • (2005) Compound Semiconductors
  • 3
    • 4544242038 scopus 로고    scopus 로고
    • Reliability investigation of gallium nitride HEMT
    • October
    • Sozza A et al. Reliability investigation of gallium nitride HEMT, Microelectron Reliab Special Issue, 2004;44(October):1369-73.
    • (2004) Microelectron Reliab , vol.44 , Issue.SPECIAL ISSUE , pp. 1369-1373
    • Sozza, A.1
  • 5
    • 33645607354 scopus 로고    scopus 로고
    • A 2000 hour storage test on AlGaN/GaN HEMTs for RF and microwave applications
    • Sozza A et al. A 2000 hour storage test on AlGaN/GaN HEMTs for RF and microwave applications, Tech. Dig. WOCSDICE 2005, p. 119-121.
    • (2005) Tech. Dig. WOCSDICE , pp. 119-121
    • Sozza, A.1
  • 6
    • 33645604293 scopus 로고    scopus 로고
    • Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement
    • Jacquet JC et al. Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 12th GAAS Symposium 2004, p. 235-8.
    • (2004) 12th GAAS Symposium , pp. 235-238
    • Jacquet, J.C.1
  • 7
    • 21644446415 scopus 로고    scopus 로고
    • Edge trapping mechanism of current collapse in III-N FETs
    • Braga N et al. Edge trapping mechanism of current collapse in III-N FETs, IEDM 2004 Tech. Dig, p. 815-8.
    • IEDM 2004 Tech. Dig , pp. 815-818
    • Braga, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.