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Volumn 45, Issue 9-11, 2005, Pages 1617-1621
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A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications
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Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFICATION;
DATA REDUCTION;
ELECTRIC CURRENTS;
FREQUENCIES;
HOT CARRIERS;
MICROWAVES;
DEVICE DEGRADATION;
DRAIN SATURATION CURRENTS;
FREQUENCY RANGES;
HIGH FORWARD GATE CURRENTS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 24144440420
PISSN: 00262714
EISSN: None
Source Type: Journal
DOI: 10.1016/j.microrel.2005.07.081 Document Type: Conference Paper |
Times cited : (39)
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References (7)
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