A study of output power stability of GaN HEMTs on SiC substrates

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 577-578

  Boutros, K S ^a   Rowell, P ^a   Brar, B ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Device degradation; GaN HEMTs; Output power stability; RF stress

Indexed keywords

POWER DEGRADATION; POWER STABILITY; STRESS MEASUREMENTS;

ELECTRIC FIELDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; POWER AMPLIFIERS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; STRESS ANALYSIS; THERMAL STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3042611431     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. L. Chen, R. Coffie, S. Heikman, D. Buttari, A. Chilli, A. Chakraborti, S. Keller, S. DenBaars. and U. Mishra. IEEE Device Research Conference, Salt Lake City, 2003.
2. V. Tilak, B. Green, V. Kaper. H. Kim, T. Prunty, J. Smart. J. Shealy and L. Eastman, IEEE Elect. Dev. Lett,. 22, 504 (2001)
3. J.P. Calame, F. Wood, and R. Myers.
4. th Int. Conf. on Thermal & Thermo-mechanical Phenomena in Electronic Systems, June 04, Las Vegas.
5. th International Conference on Nitride Semiconductors, Part A, pp. 203-6, 2001.
6. th International Conference on Nitride Semiconductors. May 2003, Nara, Japan.