Reliability of large periphery GaN-on-Si HFETs

2005 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings

Volumn 2005, Issue , 2005, Pages 135-150

  Singhal, S ^a   Li, T ^a   Chaudhari, A ^a   Hanson, A W ^a   Therrien, R ^a   Johnson, J W ^a   Nagy, W ^a   Marquart, J ^a   Rajagopal, P ^a   Piner, E L ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; OPTIMIZATION; RELIABILITY; SEMICONDUCTING SILICON; SILICON WAFERS;

DEVICE DESIGN; MATERIALS GROWTH; WAFER FABRICATION;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 33846331261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/rocs.2005.201560     Document Type: Conference Paper

References (7)

1. A.W. Hanson et al, "Development of a GaN transistor process for linear power applications," Compound Semiconductor MANTECH, pp.107-110, 2004.
2. J.W. Johnson et al, "Material, Process, and Device Development of GaN-based HFETs on Silicon Substrates", Electrochemical Society Proceedings, 2004-06, pp. 405-419 2004.
3. J.W. Johnson et al, "12W/mm AlGaN-GaN HFETs on Silicon Substrates", IEEE Electron Device Letters, 25(7), pp. 459-461, 2004
4. W. Nagy et al, "150W Gan-on-Si RF Power Transistor," IEEE MTT-S Int. Microwave Symp. Digest, 2005.
5. C. Cheng et al, "Hot carrier degradation in LDMOS power transistors," Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2004, pp. 283-286, 2004.
6. B. Yang et al, "Reliability of 6 inch 0.4 μm-gate PHEMT device," Proceedings of GaAs Reliability Workshop, 2000. pp. 53-61, 2000.
7. P.F. Marsh, et al, "Reliability of metamorphic HEMTs on GaAs substrates," Proceedings of GaAs Reliability Workshop, 2001. pp. 119-132, 2001.