High breakdown GaN HEMT with overlapping gate structure

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 373-375

  Zhang, N Q ^a   Keller, S ^a   Parish, G ^a   Heikman, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; PERMITTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

DRAIN-SIDE GATE EDGE; OVERLAPPING-GATE METHOD;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034259532     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. O. Ambacher, "Growth and applications of group III-nitrides," J. Phys. D, vol. 31, pp. 2653-2710, 1998.
2. P. M. Asbeck et al., "Piezoelectric charge densities in AlGaN/GaN HFETs," Electron. Lett., vol. 33, pp. 1230-1231, 1997.
3. Y.-F. Wu et al., "Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T and 1.7-W/mm output-power at 10 GHz," IEEE Electron Device Lett., vol. 18, pp. 438-440, Sept. 1997.
4. R. Vetury et al., "Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors," in IEDM Tech. Dig., Dec. 1998.
5. W. R. Frensley, "Power-limiting breakdown effects in GaAs MESFETs," IEEE Trans. Electron Devices, vol. 28, pp. 962-970, Aug. 1981.
6. T. M. Barton and P. H. Ladbrooke, "The role of the device surface in the high voltage behavior of the GaAs MESFET," Solid-State Electron., vol. 29, pp. 807-813, 1986.
7. C.-L. Chen, "Breakdown of overlapping-gate GaAs MESFETs," IEEE Trans. Electron Devices, vol. 43, pp. 535-542, Apr. 1996.
8. C.-L. Chen et al., "High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure," IEEE Electron Device Lett., vol. 13, pp. 335-337, June 1992.
9. L.-W. Yin et al., "Device performance of submicrometer MESFETs with LTG passivation," Electron. Lett., vol. 29, pp. 1550-1551, 1993.