Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 448-450

  Daumiller, I ^a   Kirchner, C ^a   Kamp, M ^a   Ebeling, K J ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY;

GALLIUM NITRIDE;

FIELD EFFECT TRANSISTORS;

EID: 0032595863     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784448     Document Type: Article

References (8)

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