Mechanism of current collapse removal in field-plated nitride HFET

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 704-706

  Koudymov, A ^a   Adivarahan, V ^a   Yang, J ^a   Simin, G ^a   Khan, M Asif ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Current collapse; Field plate (FP); GaN AlGaN; High field effect transistors (HFET); High electron mobility transistors (HEMT); Metal oxide semiconductor heterojunction field effect transistor MOSHFET; Microwave power

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON TRAPS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; MOSFET DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS;

CURRENT COLLAPSE; FIELD PLATE (FP); HIGH FIELD EFFECT TRANSISTORS (HFET); MICROWAVE POWER; MOSHFET;

FIELD EFFECT TRANSISTORS;

EID: 27144522038     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855409     Document Type: Article

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