Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates

Electronics Letters

Volumn 40, Issue 24, 2004, Pages 1547-1548

  Lee, C ^a   Tserng, H ^a   Witkowski, L ^a   Saunier, P ^a   Guo, S ^b   Albert, B ^b   Birkhahn, R ^c   Munns, G ^c  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b EMCORE CORPORATION   (United States)

^c APA Enterprises Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; MILLIMETER WAVES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON WAFERS; STRESS ANALYSIS;

BARRIER THICKNESS; CURRENT DISPERSIONS; FIELD-PLATE (FP) GATES; RF STRESSES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 10944243171     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046921     Document Type: Article

References (7)

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