Structural and optical properties of GaInNAs/GaAs quantum structures

Journal of Physics Condensed Matter

Volumn 16, Issue 31, 2004, Pages

  Hakkarainen, T ^a,b   Toivonen, J ^a,c   Koskenvaara, H ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c UNIVERSITY OF TURKU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; LASER BEAM EFFECTS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SYNCHROTRON RADIATION; THICKNESS MEASUREMENT;

EPILAYERS; QUANTUM STRUCTURES; THERMAL ANNEALING; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4043126727     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/31/002     Document Type: Review

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