Suppression of interfacial atomic diffusion in InGaNAs/GaAs heterostructures grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4720-4722

  Peng, C S ^a   Pavelescu, E M ^a   Jouhti, T ^a   Konttinen, J ^a   Fodchuk, I M ^a   Kyslovsky, Y ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DIFFUSIONS; BLUE SHIFT; GAAS; INGANAS; MECHANICAL STRESS; OPTICAL ACTIVITY; PHOTOLUMINESCENCE SIGNALS; QUANTUM WELL; STRAINED LAYERS;

GALLIUM; SEMICONDUCTOR QUANTUM WELLS; STRESSES;

CRYSTALS;

EID: 79956038870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1488687     Document Type: Article

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