-
1
-
-
0031995210
-
A review of recent advances in semiconductor laser based gas monitors
-
Werle, P.: 'A review of recent advances in semiconductor laser based gas monitors', Spectrochim. Acta, 1998, A54, pp. 197-236
-
(1998)
Spectrochim. Acta
, vol.A54
, pp. 197-236
-
-
Werle, P.1
-
2
-
-
0030079777
-
GaInNAs: A novel material for long-wavelength range laser diodes with excellent high-temperature performance
-
Kondow, M., et al.: 'GaInNAs: A novel material for long-wavelength range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, (2B), pp. 1273-1275
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
, Issue.2 B
, pp. 1273-1275
-
-
Kondow, M.1
-
3
-
-
0033312505
-
1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
-
Borchert, B., et al.: '1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance', Electron. Lett., 1999, 35, (25), pp. 2204-2206
-
(1999)
Electron. Lett.
, vol.35
, Issue.25
, pp. 2204-2206
-
-
Borchert, B.1
-
4
-
-
0036478736
-
1.3 μm GaInAsN laserdiodes with improved high temperature performance
-
Fischer, M., Gollub, D., and Forchel, A.: '1.3 μm GaInAsN laserdiodes with improved high temperature performance', Jpn. J. Appl. Phys., 2002, 41, (2B), pp. 1161-1163
-
(2002)
Jpn. J. Appl. Phys.
, vol.41
, Issue.2 B
, pp. 1161-1163
-
-
Fischer, M.1
Gollub, D.2
Forchel, A.3
-
5
-
-
0037011602
-
1.3-μm continuous wave GaInNAs/GaAs distributed feedback laser diodes
-
Gollub, D., et al.: '1.3-μm continuous wave GaInNAs/GaAs distributed feedback laser diodes', Appl. Phys. Lett., 2002, 81, (23), pp. 4330-4331
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.23
, pp. 4330-4331
-
-
Gollub, D.1
-
6
-
-
0035132379
-
Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature
-
Steinle, G., Riechert, H., and Egorov, A.Y.: 'Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature', Electron. Lett., 2001, 37, (2), pp. 93-95
-
(2001)
Electron. Lett.
, vol.37
, Issue.2
, pp. 93-95
-
-
Steinle, G.1
Riechert, H.2
Egorov, A.Y.3
-
7
-
-
0035263856
-
High-performance CW 1.26 μm GaInNAsSb-SQW ridge lasers
-
Shimizu, H., et al.: 'High-performance CW 1.26 μm GaInNAsSb-SQW ridge lasers', IEEE J. Sel. Top. Quantum. Electron., 2001, 7, (2), pp. 355-364
-
(2001)
IEEE J. Sel. Top. Quantum. Electron.
, vol.7
, Issue.2
, pp. 355-364
-
-
Shimizu, H.1
-
8
-
-
0036713786
-
Long-wavelength GaInNAs(Sb) lasers on GaAs
-
Ha, W., et al.: 'Long-wavelength GaInNAs(Sb) lasers on GaAs', IEEE J. Quantum Electron., 2002, 39, (9), pp. 1260-1267
-
(2002)
IEEE J. Quantum Electron.
, vol.39
, Issue.9
, pp. 1260-1267
-
-
Ha, W.1
-
9
-
-
79956054969
-
Low-theshold-current-density 1300-nm dilute-nitride quantum well lasers
-
Tansu, N., Kirsch, N.J., and Mawst, L.J.: 'Low-theshold-current-density 1300-nm dilute-nitride quantum well lasers', Appl. Phys. Lett., 2002, 81, (14), pp. 2523-2525
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.14
, pp. 2523-2525
-
-
Tansu, N.1
Kirsch, N.J.2
Mawst, L.J.3
-
10
-
-
0037179903
-
Towards high performance GaInAsN/GaAsN laser diodes in the 1.5 μm range
-
Gollub, D., Fischer, M., and Forchel, A.: 'Towards high performance GaInAsN/GaAsN laser diodes in the 1.5 μm range', Electron. Lett., 2002, 38, (20), pp. 1183-1184
-
(2002)
Electron. Lett.
, vol.38
, Issue.20
, pp. 1183-1184
-
-
Gollub, D.1
Fischer, M.2
Forchel, A.3
-
11
-
-
0037075613
-
Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
-
Ha, W., et al.: 'Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers', Electron. Lett., 2002, 38, (6), pp. 277-278
-
(2002)
Electron. Lett.
, vol.38
, Issue.6
, pp. 277-278
-
-
Ha, W.1
-
12
-
-
0038687348
-
1.42 μm continuous-wave operation of GaInNAs laser diodes
-
Gollub, D., et al.: '1.42 μm continuous-wave operation of GaInNAs laser diodes', Electron. Lett., 2003, 39, (10), pp. 777-778
-
(2003)
Electron. Lett.
, vol.39
, Issue.10
, pp. 777-778
-
-
Gollub, D.1
|