Strain-compensated GaInNAs structures for 1.3-μm lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 787-794

  Jouhti, Tomi ^a   Peng, Chang Si ^a   Pavelescu, Emil Mihai ^a   Konttinen, Janne ^a   Gomes, Luis Aguiar ^a   Okhotnikov, Oleg G ^a   Pessa, Markus ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

GaInNAs; Molecular beam epitaxy; Semiconductor laser

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS; X RAY DIFFRACTION ANALYSIS;

DOUBLE CRYSTAL X RAY DIFFRACTION; STRAIN COMPENSATING LAYERS; STRAIN MEDIATING LAYERS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036661983     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801671     Document Type: Article

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