메뉴 건너뛰기




Volumn 4649, Issue , 2002, Pages 31-38

Development of 1.3 micron oxide-confined VCSELs grown by MOCVD

Author keywords

GaInNAs; Long wavelength lasers; Optical fiber communications; Semiconductor laser

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; OPTICAL COMMUNICATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EID: 0036407558     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.469247     Document Type: Article
Times cited : (12)

References (7)
  • 1
    • 0034204919 scopus 로고    scopus 로고
    • Low threshold and high characteristic temperature 1.3 μm range GaInNAs lasers grown by metalorganic chemical vapor deposition
    • S. Sato' Low threshold and high characteristic temperature 1.3 μm range GaInNAs lasers grown by metalorganic chemical vapor deposition", Jpn. J. Appl. Phys. 39, pp. 3403-3405, 2000.
    • (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 3403-3405
    • Sato, S.1
  • 3
    • 0035132379 scopus 로고    scopus 로고
    • Monolithic VCSEL with InGaAsN active region emitting at 1.28 mm and cw-output power exceeding 500 mW at roo-temperature
    • G. Steinle, A. Y. Egorov, H. Riechert' Monolithic VCSEL with InGaAsN active region emitting at 1.28 mm and cw-output power exceeding 500 mW at roo-temperature", Electron. Lett. 37, p. 93, 2001.
    • (2001) Electron. Lett. , vol.37 , pp. 93
    • Steinle, G.1    Egorov, A.Y.2    Riechert, H.3
  • 5
    • 0035440093 scopus 로고    scopus 로고
    • Continuous-wave operation of a 1.3-μm GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
    • F. Quochi, D. Kilper, J. Cunningham, M. Dinu and J. Shah' Continuous-wave operation of a 1.3-μm GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature", IEEE Photon. Technol. Lett. 13, pp. 921-923, 2001.
    • (2001) IEEE Photon. Technol. Lett. , vol.13 , pp. 921-923
    • Quochi, F.1    Kilper, D.2    Cunningham, J.3    Dinu, M.4    Shah, J.5
  • 6
    • 0034228769 scopus 로고    scopus 로고
    • Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm
    • O. Blum and J. Klem' Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm", IEEE Photon. Technol. Lett. 12, pp. 771-773, 2000.
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , pp. 771-773
    • Blum, O.1    Klem, J.2
  • 7
    • 84992573699 scopus 로고    scopus 로고
    • International Telecommunication Union Standardization Sector recommendation G.957
    • International Telecommunication Union Standardization Sector recommendation G.957, pp. 1-30, 1999.
    • (1999) , pp. 1-30


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.