Nitrogen solubility and induced defect complexes in epitaxial GaAs:N

Physical Review Letters

Volumn 86, Issue 9, 2001, Pages 1789-1792

  Zhang, S B ^a   Wei, Su Huai ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DEFECTS; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SOLUBILITY; SURFACE STRUCTURE; THERMODYNAMICS;

INDUCED DEFECT COMPLEXES; NITROGEN SOLUBILITY;

EPITAXIAL GROWTH;

EID: 14344273948     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.1789     Document Type: Article

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