GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1273-1275

  Kondow, Masahiko ^a   Uomi, Kazuhisa ^a   Niwa, Atsuko ^a   Kitatani, Takeshi ^a   Watahiki, Seiji ^a   Yazawa, Yoshiaki ^a  

^a HITACHI LTD   (Japan)

Author keywords

GaAs substrate; GaInNAs; High temperature performance; Ideal band lineup; Long wavelength range laser diode

Indexed keywords

BAND STRUCTURE; ENERGY GAP; HIGH TEMPERATURE PROPERTIES; LATTICE CONSTANTS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

GALLIUM INDIUM NITROGEN ARSENIDE; HIGH TEMPERATURE PERFORMANCE; IDEAL BAND LINE UP; LONG WAVELENGTH RANGE LASER DIODES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030079777     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1273     Document Type: Article

References (6)

1. C. E. Zah, R. Bhat, B. N. Pathak, F. Favier, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P Lee, Z. Wang, D. Darby, D. Flanders and J. J. Hsieh: IEEE J. Quantum Electron. 30 (1994) 511.
2. M. Kondow, K. Uomi, K. Hosomi and T. Mozume: Workbook 8th Int. Conf. Molecular Beam Epitaxy, Osaka, 1994, p. 323.
3. S. Sakai and T. Abe: Extd. Abstr. 41st Spring Meating Jpn. Soc. Appl. Phys., Tokyo, 1994, p. 186.
4. I. Suemune: Jpn. J. Appl. Phys. 31 (1992) L95.
5. M. Kondow, K. Uomi, K. Hosomi and T. Mozume: Jpn. J. Appl. Phys. 33 (1994) L1056.
6. M. Kondow, K. Uomi, T. Kitatani, S. Watahiki and Y. Yazawa: to be published in J. Crystal Growth as a special issue of 5th Int. Conf. Chemical Beam Epitaxy, La Jolla, 1995 (Paper: WA-5).