InAs/GaAs quantum dots optically active at 1.5 μm

Applied Physics Letters

Volumn 82, Issue 16, 2003, Pages 2646-2648

  Da Silva, M J ^a   Quivy, A A ^a   Martini, S ^a   Lamas, T E ^a   Da Silva, E C F ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

TELECOMMUNICATIONS WINDOW;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037883452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569053     Document Type: Article

References (13)

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