메뉴 건너뛰기




Volumn 74, Issue 8, 1999, Pages 1111-1113

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001542266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123459     Document Type: Article
Times cited : (579)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.