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Volumn 74, Issue 8, 1999, Pages 1111-1113

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

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EID: 0001542266 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123459 Document Type: Article

Times cited : (576)

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