Nitrogen composition and growth temperature dependence of growth characteristics for self-assembled GaInNAs/GaAs quantum dots by chemical beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 953-957

  Makino, Shigeki ^a   Miyamoto, Tomoyuki ^a   Kageyama, Takeo ^a   Ikenaga, Yoshihiko ^a   Koyama, Fumio ^a   Iga, Kenichi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KOGAKUIN UNIVERSITY   (Japan)

Author keywords

CBE; GaInNAs; Nitrogen; Quantum dot; Semiconductor laser; VCSELs

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; COMPOSITION; DENSITY (SPECIFIC GRAVITY); MORPHOLOGY; NITROGEN; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

VERTICAL CAVITY SURFACE EMITTING LAERS (VCSEL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036478682     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.953     Document Type: Conference Paper

References (37)