Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

Journal of Crystal Growth

Volumn 236, Issue 4, 2002, Pages 516-522

  Wei, X ^a   Wang, G H ^a   Zhang, G Z ^a   Zhu, X P ^a   Ma, X Y ^a   Chen, L H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. High resolution X ray diffraction; A1. Precursor; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds

Indexed keywords

CHEMICAL BEAM EPITAXY; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036494411     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02386-7     Document Type: Article

References (19)