-
1
-
-
0033171401
-
Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers
-
DEPPE, D.G., HUFFAKER, D.L., ZOU, Z., PARK, G., and SHCHEKIN, O.B.: 'Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers', IEEE J. Quantum Electron., 1999, 35, pp. 1238-1246
-
(1999)
IEEE J. Quantum Electron.
, vol.35
, pp. 1238-1246
-
-
Deppe, D.G.1
Huffaker, D.L.2
Zou, Z.3
Park, G.4
Shchekin, O.B.5
-
2
-
-
0036765635
-
Long-wavelength quantum-dot lasers on GaAs substrates: From media to device concepts
-
LEDENTSOV, N.M.: 'Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts', IEEE J. Sel. Top. Quantum Electron., 2002, 8, pp. 1015-1024
-
(2002)
IEEE J. Sel. Top. Quantum Electron.
, vol.8
, pp. 1015-1024
-
-
Ledentsov, N.M.1
-
3
-
-
0032473661
-
Low threshold quantum dot injection laser emitting at 1.9 μm
-
USTINOV, V.M., ZHUKOV, A.E., EGOROV, A.YU, KOVSH, A.R., ZAITSEV, S.V., GORDEEV, N.YU., KOPCHATOV, V.I., LEDENTSOV N.N., TSATSUL'NIKOV, A.F., VOLOVIK, B.V., KOP'EV, P.S., ALFEROV, Z.I., RUVIMOV, S.S., LILIENTAL-WEBER, Z., and BIMBERG, D.: 'Low threshold quantum dot injection laser emitting at 1.9 μm', Electron. Lett., 1998, 34, pp. 670-672
-
(1998)
Electron. Lett.
, vol.34
, pp. 670-672
-
-
Ustinov, V.M.1
Zhukov, A.E.2
Egorov, A.Yu.3
Kovsh, A.R.4
Zaitsev, S.V.5
Gordeev, N.Yu.6
Kopchatov, V.I.7
Ledentsov, N.N.8
Tsatsul'nikov, A.F.9
Volovik, B.V.10
Kop'ev, P.S.11
Alferov, Z.I.12
Ruvimov, S.S.13
Liliental-Weber, Z.14
Bimberg, D.15
-
4
-
-
84968527943
-
A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE
-
San Francisco, CA, USA
-
WONILL, H.A., GAMBIN, V., BANK, S., WISTEY, M., YUEN, H., GODDARD, L., KIM, S., and HARRIS, J.: 'A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE'. Abstracts of the International Conference on Molecular Beam Epitaxy, San Francisco, CA, USA, 2002, pp. 61-62
-
(2002)
Abstracts of the International Conference on Molecular Beam Epitaxy
, pp. 61-62
-
-
Wonill, H.A.1
Gambin, V.2
Bank, S.3
Wistey, M.4
Yuen, H.5
Goddard, L.6
Kim, S.7
Harris, J.8
-
5
-
-
0037456917
-
1.5 μm laser on GaAs with GaInNAsSb quinary quantum well
-
LI, L.H., SALLET, V., PATRIARCHE, G., LARGEAU, L., BOUCHOULE, S., MERGHEM, K., TRAVERS, L., and HARMAND, J.C.: '1.5 μm laser on GaAs with GaInNAsSb quinary quantum well', Electron. Lett., 2003, 39, pp. 519-520
-
(2003)
Electron. Lett.
, vol.39
, pp. 519-520
-
-
Li, L.H.1
Sallet, V.2
Patriarche, G.3
Largeau, L.4
Bouchoule, S.5
Merghem, K.6
Travers, L.7
Harmand, J.C.8
-
6
-
-
0003933757
-
Growth processes and surface phase equilibria in molecular beam epitaxy
-
Springer, Berlin
-
LEDENTSOV, N.N.: 'Growth processes and surface phase equilibria in molecular beam epitaxy' in 'Springer tracts in modern physics' (Springer, Berlin, 1999), Vol. 156, p. 81
-
(1999)
Springer Tracts in Modern Physics
, vol.156
, pp. 81
-
-
Ledentsov, N.N.1
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