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Volumn 39, Issue 15, 2003, Pages 1126-1128

High performance quantum dot lasers on GaAs substrates operating in 1.5 μm range

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

EID: 0043071433     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030753     Document Type: Article
Times cited : (185)

References (6)
  • 1
    • 0033171401 scopus 로고    scopus 로고
    • Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers
    • DEPPE, D.G., HUFFAKER, D.L., ZOU, Z., PARK, G., and SHCHEKIN, O.B.: 'Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers', IEEE J. Quantum Electron., 1999, 35, pp. 1238-1246
    • (1999) IEEE J. Quantum Electron. , vol.35 , pp. 1238-1246
    • Deppe, D.G.1    Huffaker, D.L.2    Zou, Z.3    Park, G.4    Shchekin, O.B.5
  • 2
    • 0036765635 scopus 로고    scopus 로고
    • Long-wavelength quantum-dot lasers on GaAs substrates: From media to device concepts
    • LEDENTSOV, N.M.: 'Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts', IEEE J. Sel. Top. Quantum Electron., 2002, 8, pp. 1015-1024
    • (2002) IEEE J. Sel. Top. Quantum Electron. , vol.8 , pp. 1015-1024
    • Ledentsov, N.M.1
  • 6
    • 0003933757 scopus 로고    scopus 로고
    • Growth processes and surface phase equilibria in molecular beam epitaxy
    • Springer, Berlin
    • LEDENTSOV, N.N.: 'Growth processes and surface phase equilibria in molecular beam epitaxy' in 'Springer tracts in modern physics' (Springer, Berlin, 1999), Vol. 156, p. 81
    • (1999) Springer Tracts in Modern Physics , vol.156 , pp. 81
    • Ledentsov, N.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.