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Volumn 39, Issue 8, 2003, Pages 662-664
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MOVPE-grown GaInNAs VCSELs at 1.3 μm with conventional mirror design approach
a a a b b c c c c c d d d
d
IQE INC
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
INTERFACES (MATERIALS);
LIGHT EMISSION;
METALLORGANIC VAPOR PHASE EPITAXY;
MIRRORS;
RESONANCE;
SEMICONDUCTOR DOPING;
MIRROR DESIGN;
SEMICONDUCTOR LASERS;
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EID: 0037666369
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:20030450 Document Type: Article |
Times cited : (17)
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References (5)
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