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Volumn 39, Issue 8, 2003, Pages 662-664

MOVPE-grown GaInNAs VCSELs at 1.3 μm with conventional mirror design approach

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; INTERFACES (MATERIALS); LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; RESONANCE; SEMICONDUCTOR DOPING;

EID: 0037666369     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030450     Document Type: Article
Times cited : (17)

References (5)
  • 3
    • 0037187736 scopus 로고    scopus 로고
    • Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
    • RAMAKRISIINAN, A., STEINLE, G., SUPPER, D., DEGEN, C., and EBBINGHAUS, G.: 'Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region', Electron. Lett., 2002, 38, pp. 322-324
    • (2002) Electron. Lett. , vol.38 , pp. 322-324
    • Ramakrisiinan, A.1    Steinle, G.2    Supper, D.3    Degen, C.4    Ebbinghaus, G.5
  • 5
    • 0002557544 scopus 로고    scopus 로고
    • Optoelectronic device simulation of Bragg reflectors and their influence on surface emitting laser characteristics
    • WINSTON, D.W., and HAYES, R.E.: 'Optoelectronic device simulation of Bragg reflectors and their influence on surface emitting laser characteristics', IEEE J. Quantum Electron., 1998, 34, pp. 707-715. http://www-ocs.colorado.edu/SimWindows/simwin.html
    • (1998) IEEE J. Quantum Electron. , vol.34 , pp. 707-715
    • Winston, D.W.1    Hayes, R.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.