High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1726-1728

  Kovsh, A R ^a,b   Wang, J S ^a   Hsiao, R S ^a   Chen, L P ^a   Livshits, D A ^b   Lin, G ^a   Ustinov, V M ^b   Chi, J Y ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH POWER LASERS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL CAVITY SURFACE EMITTING LASER; WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0344704057     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031085     Document Type: Article

References (6)

1. Kisker, D.W., and Bisberg, J.E.: 'Infrared vertical-cavity surface-emitting lasers-an industrial perspective', MRS Bull., 2002, 27, (7), pp. 512-518 (Review)
2. Kovsh, A.R., et al.: 'InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency', Electron. Lett., 2002, 38, (19), pp. 1104-1106
3. Shchekin, O.B., Ahn, J., and Deppe, D.G.: 'High temperature performance of a self-organised quantum dot laser with a stacked p-doped active region', Electron. Lett., 2002, 38, (14), pp. 712-713
4. Zhukov, A.E., et al.: 'Output power and its limitation in ridge-waveguide 1.3 μm wavelength quantum-dot lasers', Semicond. Sci. Technol., 2003, 18, pp. 774-781
5. Egorov, A.Yu., et al.: 'Growth of high quality InGaAsN heterostructures and their laser application', J. Crys. Growth, 2001, 227-228, pp. 545-552
6. Kovsh, A.R., et al.: 'Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency', J. Vac. Sci. Technol. B, 2002, 20, (3), pp. 1158-1161