Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-μm GaInNAs/GaAs single quantum well lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1040-1042

  Plaine, Glenn Yves ^a   Asplund, Carl ^a   Sundgren, Petrus ^a   Mogg, Sebastian ^a   Hammar, Mattias ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

^b Box 520   (Sweden)

Author keywords

1.3 m; GaInNAs; Long wavelength; Low temperature growth; Metalorganic vapor phase deposition; Photoluminescence; Quantum well; Vertical cavity surface emitting laser

Indexed keywords

ELECTRIC CURRENTS; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; RATE CONSTANTS; SEMICONDUCTING GALLIUM ARSENIDE;

SURFACE-EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0036478699     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1040     Document Type: Conference Paper

References (10)