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Journal of Crystal Growth

Volumn 234, Issue 4, 2002, Pages 631-636

GaInNAs quantum well structures for 1.55 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

(4) Hakkarainen, T a Toivonen, J a Sopanen, M a Lipsanen, H a

a AALTO UNIVERSITY (Finland)

Author keywords

A1. Photoluminescence; A1. Rapid thermal annealing; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting materials

Indexed keywords

LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

MULTIPLE QUANTUM WELL (MQW) STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036466671 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01750-X Document Type: Article

Times cited : (29)

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