Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy

Journal of Crystal Growth

Volumn 247, Issue 3-4, 2003, Pages 279-283

  Yew, K C ^a   Yoon, S F ^a   Sun, Z Z ^a   Wang, S Z ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A3. Self assembled quantum dots; A3. Solid source molecular beam epitaxy GaInNAs GaAs

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; PHOTOLUMINESCENCE; PLASMA SOURCES; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SHRINKAGE; THICKNESS MEASUREMENT;

PHONON SCATTERING;

MOLECULAR BEAM EPITAXY;

EID: 0037212369     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01987-5     Document Type: Article

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