Signature of an intrinsic point defect in GaNxAs1−x

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 3, 2001, Pages

  Thinh, N Q ^a   Buyanova, I A ^a   Hai, P N ^a   Chen, W M ^a   Xin, H P ^b   Tu, C W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; NITROGEN;

ARTICLE; CHEMICAL INTERACTION; CHEMICAL STRUCTURE; COMPLEX FORMATION; NUCLEAR MAGNETIC RESONANCE; STRENGTH;

EID: 85039030456     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.033203     Document Type: Article

References (19)

1. G. D. Watkins, in Deep Centers in Semiconductors, 2nd ed., edited by S. T. Pantelides (Gordon and Breach Science Publishers, Switzerland, 1992), p. 177.
2. G. D. Watkins and K. H. Chow, Physica B, 273-274, 7 (1999).
3. M. Weyers and M. Sato, Appl. Phys. Lett., 62, 1396 (1992).
4. M. Kondow, K. Uomi, T. Kitatani, S. Watahiki, and Y. Yazawa, J. Cryst. Growth, 164, 175 (1996).
5. W. G. Bi and C. W. Tu, Appl. Phys. Lett., 70, 1608 (1997).
6. S.-H. Wei and A. Zunger, Phys. Rev. Lett., 76, 664 (1996).
7. T. Mattila, S.-H. Wei, and A. Zunger, Phys. Rev. B, 60, R11245 (1999).
8. J. D. Perkins, A. Mascarenhas, Yong Zhang, J. F. Geisz, D. J. Freidman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett., 82, 3312 (1999).
9. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Freidman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett., 82, 1221 (1999).
10. I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, B. Monemar, H. P. Xin, and C. W. Tu, Appl. Phys. Lett., 75, 501 (1999).
11. I. A. Buyanova, W. M. Chen, B. Monemar, H. P. Xin, and C. W. Tu, Appl. Phys. Lett., 75, 3781 (1999).
12. T. A. Kennedy and M. G. Spencer, Phys. Rev. Lett., 57, 2690 (1986).
13. J. M. Trombetta, T. A. Kennedy, W. Tseng, and D. Gammon, Phys. Rev. B, 43, 2458 (1991).
14. T. Wimbaur, M. S. Brandt, M. W. Bayerl, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, and M. Mizuta, Mat. Sci. Forum, 258-263, 1309 (1997).
15. F. K. Koschnick and J.-M. Spaeth, Phys. Status Solidi B, 216, 817 (1999).
16. H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, and E. H. Poindexter, Appl. Phys. Lett., 60, 718 (1992).
17. K. Krambrock, M. Linde, J.-M. Spaeth, D. C. Look, D. Bliss, and W. Walukiewicz, Semicond. Sci. Technol., 7, 1037 (1992).
18. X. Liu, A. Prasad, W. M. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental-Weber, and E. R. Weber, Appl. Phys. Lett., 65, 3002 (1994).
19. G. A. Baraff and M. Schulter, Phys. Rev. Lett., 55, 1327 (1985).