1.42 μm continuous-wave operation of GaInNAs laser diodes

Electronics Letters

Volumn 39, Issue 10, 2003, Pages 777-778

  Gollub, D ^a   Moses, S ^b   Fischer, M ^a   Forchel, A ^b  

^a NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CONTINUOUS-WAVE OPERATION; SOLID SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0038687348     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030532     Document Type: Article

References (14)

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