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Semiconductor Science and Technology

Volumn 17, Issue 8, 2002, Pages 843-850

Insights into the electronic properties of ingaasn: The effect of nitrogen from band structure to devices

(5) Kurtz, Steven R a Modine, Normand A a Jones, Eric D a Allerman, Andrew A a Klem, John F a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ENERGY GAP; NITROGEN; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE;

RADIO-FREQUENCY PLASMA SOURCE;

INDIUM ALLOYS;

EID: 0036684030 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/8/313 Document Type: Article

Times cited : (17)

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