Metalorganic molecular beam epitaxy of GaNAs alloys on (0 0 1)GaAs

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 490-495

  Uesugi, Katsuhiro ^a   Suemune, Ikuo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AFM; GaAs substrate; GaNAs; MOMBE; Monomethylhydrazine; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

METALLORGANIC MOLECULAR BEAM EPITAXY;

GALLIUM ALLOYS;

EID: 0032091586     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00337-6     Document Type: Article

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