Thermodynamic analysis of the MBE growth of GaInAsN

Semiconductor Science and Technology

Volumn 16, Issue 10, 2001, Pages 831-835

  Odnoblyudov, V A ^a   Egorov, A Y ^a   Kovsh, A R ^a   Zhukov, A E ^a   Maleev, N A ^a   Semenova, E S ^a   Ustinov, V M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; NITROGEN; THERMAL EFFECTS; THERMODYNAMICS;

QUATERNARY COMPOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035481125     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/10/304     Document Type: Article

References (14)